IBM Fabrication Processes
The IBM fabrication processes available range from 32 nanometer to 0.25 µm in CMOS, and from 0.13 µm to 0.50 µm in SiGe BiCMOS.
IBM SiGe & CMOS Processes
These IBM processes support ITAR regulated designs.
Maic has compiled the following chart comparing various features to help you better select which IBM process is most appropriate to your application.
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IBM SiGe BiCMOS Processes
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| Feature Size |
Process Name |
CMOS
Vdd [V] |
SiGe Ft [GHz] | BVceo(1) [V] |
Description |
| High Performance |
High Breakdown |
| 0.13 µm |
8HP |
1.2, 2.5, 3.3 |
200 | 1.77 |
57 | 3.55 |
5th generation SiGe technology for advanced RADAR and mmWave applications. |
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| 8WL |
1.2, 2.5, 3.3 |
103 | 2.4 |
54 | 4.7 |
Reduced performance, cost effective technology for wireless applications. |
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| 0.18 µm |
7HP |
1.8, 2.5, 3.3 |
120 | 2.0 |
20 | 4.75 |
4th generation SiGe technology best suited for wireless and high-speed switches. |
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| 7WL |
1.8, 2.5, 3.3 |
60 | 3.3 |
29 | 6.0 |
Reduced performance, yet most cost effective SiGe technology offered. |
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| 0.25 µm |
6HP/6DM |
2.5, 3.3 |
47 | 3.3 |
27 | 5.7 |
3rd generation SiGe technology. |
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| 6WL |
2.5, 3.3 |
60 | 3.2 |
29 | 6.0 |
A descendant of 7WL, it integrates 0.25 µm CMOS with the 7WL SiGe NPN. |
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| 0.35 µm |
5HPE |
3.3, 5.0 |
43 | 3.3 |
19 | 9.6 |
2nd generation SiGe technology with 0.35 µm CMOS and 0.5 µm SiGe NPN's. |
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| 5PAe |
3.3, 5.0 |
35 | 5.5 |
25 | 7.5 |
Intended for power amplifier applications, this process features Through Wafer Vias (Through Silicon Vias (TSV)). |
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| 0.50 µm |
5HP |
3.3 |
51 | 3.3 |
27 | 5.5 |
1st generation SiGe technology. |
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| 5AM |
3.3 |
51 | 3.3 |
27 | 5.5 |
Similar to 5HP, but adds a thick top metal. |
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| 5DM |
3.3 |
51 | 3.3 |
27 | 5.5 |
Similar to 5HP but adds two thick top metals for high-Q inductors. |
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| 5PA |
3.3 |
51 | 3.3 |
24 | 7.0 |
Similar to 5AM, this process adds higher voltage NPN's for power amplifier applications. |
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A process comparison including Ft and Fmax can be found at the IBM BiCMOS Key Technology Specifications page.
(1) BVceo is not a voltage limit for biasing unless the NPN is operating under a forced Ib condition. Vce greater than BVceo is allowed for other bias configurations, lower base impedance leading to higher voltage limits.
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IBM CMOS, IBM SOI, and IBM RF CMOS Processes
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| Feature Size |
Process Name |
Voltage (V)
Core | I/O |
Description |
| 32 nm |
32SOI |
0.9 | 1.5 |
7th generation IBM SOI technology improves energy savings for high-performance servers, printers, storage devices; networking, mobile, consumer, and game applications. Trusted foundry access only.1 |
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| 45 nm |
12SOI |
1.0 | 0.9 |
This energy-saving SOI process is suitable for a broader range of consumer electronics, including digital TVs and high-end mobile applications. Trusted foundry access only.1 |
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| 65 nm |
10SF |
1.0 | 1.8, 2.5 |
Excellent for consumer electronics, wireless communications, and other applications requiring high performance or system-on-a-chip. Trusted foundry access only.1 |
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| 10LPe/RFe |
1.2 | 2.5 |
Tailored for power-sensitive applications in wireless communications and consumer electronics. Trusted foundry access only.1 |
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| 90 nm |
9SF |
1.0 | 2.5 |
Ideal for leading-edge microprocessors, communications, and computer data processing applications. Trusted foundry access only.1 |
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| 9LP/RF |
1.2 | 2.5 |
Use for low-cost, high performance wireless applications, as Bluetooth, WLAN, cellular handsets, mobile TV, WiMax, UWB and GPS. Trusted foundry access only.1 |
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| 130 nm |
8RF-DM |
1.2 | 2.5 |
Use for low-cost, high performance wireless applications as Bluetooth, WLAN, cellular handsets and GPS. |
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| 8RF-LM |
1.2 | 2.5 |
Similar to 8RF-DM, but uses LM top metal. |
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| 180 nm |
7SF |
1.8 | 3.3 |
Use for high-performance graphics, communications, and data processing applications. |
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| 7RF |
1.8 | 3.3 |
Ideally suited for RF and wireless applications, as Bluetooth, LANs, cellular phones and RF identification tags. |
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| 7HV |
1.8/5/20/50 | |
Ideal solution for power management products, display drivers, printer and MEMS driver ICs. |
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| 7RF SOI |
1.5 | 2.5 |
Optimized for RF switch applications, integrate multiple analog functions into single-chip solutions for mobile devices. |
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| 250 nm |
6RF |
2.5 | 3.3 |
This RF CMOS process is adapted for high frequency applications with a variety of passives (as high Q inductors, MIM and MOS capacitors, and MOS varactors) for mixed-signal and RF applications. |
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1 A Trusted Foundry run is sponsored by DoD and is only available to projects authorized by DoD.
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