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TSMC(台积电)
TSMC Fabrication Processes
The TSMC fabrication processes available range from 40 nanometer to 0.35 µm. Low power, low voltage, and high voltage options are available in most of these technologies.


TSMC Processes Available Through MOSIS

MOSIS has compiled the following chart comparing various features to help you better select which TSMC process is most appropriate to your applicaiton.

Feature Size  Process Description

40 nm    Low-power logic

65 nm    Standard logic, RPO
  Mixed-mode/RF, RPO, MiM

90 nm    Standard logic, RPO
  Mixed-mode/RF, RPO, MiM

0.13 µm  CL013G Standard logic, RPO
CR013G (CM013) Mixed-mode, RPO, MiM
CL013LP Low-power logic, RPO
CL013LV Low-voltage logic, RPO

0.18 µm  CL018 Standard logic, RPO
CR018 (CM018) Mixed-mode/RF, RPO, MiM
CL018LP Low-power logic, RPO
CL018LV Low-voltage logic, RPO
CL018HV High-voltage, RPO

0.25 µm  CL025 Standard logic, RPO
CR025 (CM025) Mixed-mode/RF, RPO, MiM

0.35 µm  CL035 Standard logic, 5.0 V ESD, RPO
CM035 Mixed-mode/RF, 5.0 V ESD, PiP, 2-poly
CL035HV1 High-voltage, RPO
1 The TSMC 0.35 µm HV DDD process uses Ar anneal wafers (argon annealed wafers); the BCD process uses Hi-Wafer (hydrogen annealed wafer).

These processes use non-epitaxial wafers. Epitaxial wafers are available at an additional cost. Specify "epitaxial wafers" in the "Options" section of the Request for Custom Quote form for pricing. To order epitaxial wafers, submit the Request for Custom Quote and select the epitaxial fabrication option from either the New Project, Fabricate, or Update form.

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