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GaAs HEMT 0.15um (TQP15)工艺价格

GaAs HEMT 0.15 µm (TQP15) from TriQuint SEMICONDUCTOR

TECHNOLOGY:

GaAS D-mode pHEMT 0.15 µm (TQP15)

Spec. process char.:

Gate length: 0.15 µm
Power supply 3.0V
Pinchoff voltage 3.0V
Breakdown Vdg 14V
Ft (peak) 80GHz
Imax 580mA/mm
Gm @ Idss 550mS/mm
Schottky diodes
2 metal layers for interconnects (4µm for global, less than 1µm for local)
High-Q passives
High value MIM capacitors
Inductors
Thin film NiCr resistors
Backside vias
Die thickness 100µm
WARNING: Fixed sizes for dies with fixed orientation for transistor gates

 

 

CAD TOOLS:

 

Workstation based:

ADS, AWR, CADENCE

 

 

LIBRARIES:

Standard-components: pHEMTs, diodes, capacitors, resistors, inductors, backside vias, pads

 

 

PACKAGING:

All standard packages (QFN, LCC, CQFP,...)

 

 

TEST:

Contact CMP

 

 

INTERFACE FORMAT:

GDSII

 

 

SIMULATION:

TOM3 model for HEMT, linerar and nonlinear model

 

 

DESIGN SUPPORT:

DRC checking (free for submitted designs)

 

 

PRICES:

 

Cell libraries:

Distributed for free

Design kits:

Distributed for free

Prototyping:

See the general CMP price list for prototyping

 

 

TURNAROUND TIME:

 

Typical:

9 weeks (from GDS2 tape to bare dies)

 

 

LAST UPDATE:

April the 12th 2011

TriQuint

150nm pHEMT GaAs

2300 Euro/mm2


 

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